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ZXMN3B04N8 - 30V N-CHANNEL MOSFET

Description

This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that combines the benefits of low onresistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.

DC-DC Converters Power

Features

  • Low On-Resistance.
  • Fast Switching Speed.
  • Low Threshold.
  • Low Gate Drive.
  • Low Profile SO-8 Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: SO-8.
  • Case Material: Molded Plastic, “Green” Molding Compound, UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminals: Matte Tin Finish Annealed over Copper Leadframe. Sol.

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Full PDF Text Transcription

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ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE Product Summary BVDSS 30V RDS(ON) 0.025Ω@VGS = 4.5V ID TA = +25°C 8.9A Description This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that combines the benefits of low onresistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Applications  DC-DC Converters  Power Management Functions  Disconnect Switches  Motor Control Features  Low On-Resistance  Fast Switching Speed  Low Threshold  Low Gate Drive  Low Profile SO-8 Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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