DMT68M8LSS 60V N-CHANNEL MOSFET

DIODES

Description

DMT68M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 8.5mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID Max TA = +25°C 12.1A.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal f.

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Datasheet Specifications

Part number: DMT68M8LSS
Manufacturer: DIODES ↗
File Size: 467.86 KB
Datasheet: DMT68M8LSS-DIODES.pdf
Description: 60V N-CHANNEL MOSFET

Features

* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* High Frequency Switching
* Synchronous Rectification

DMT68M8LSS Distributors

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DMT68M8LSS 60V N-CHANNEL MOSFET DIODES

DIODES DMT68M8LSS-like datasheet