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DMT68M8LSS 60V N-CHANNEL MOSFET

DMT68M8LSS Description

DMT68M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 8.5mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID Max TA = +25°C 12.1A.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal f.

DMT68M8LSS Features

* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data

DMT68M8LSS Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* High Frequency Switching
* Synchronous Rectification

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60V N-CHANNEL MOSFET DIODES
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