DMT64M8LCG 60V N-CHANNEL MOSFET

DIODES

Description

Product Summary BVDSS 60V RDS(ON) Max 4.8mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V ID TC = +25°C 77.8A 68.2A .
and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

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Datasheet Specifications

Part number: DMT64M8LCG
Manufacturer: DIODES ↗
File Size: 347.63 KB
Datasheet: DMT64M8LCG-DIODES.pdf
Description: 60V N-CHANNEL MOSFET

Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
* Synchronous Rectifier
* Power Management Functions
* DC-DC C

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DMT64M8LCG 60V N-CHANNEL MOSFET DIODES

DIODES DMT64M8LCG-like datasheet