DMT616MLSS 60V N-Channel MOSFET

DIODES

Description

DMT616MLSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 14mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID Max TA = +25°C 10A 8..
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, which makes it ide.

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Datasheet Specifications

Part number: DMT616MLSS
Manufacturer: DIODES ↗
File Size: 468.53 KB
Datasheet: DMT616MLSS-DIODES.pdf
Description: 60V N-Channel MOSFET

Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
* High-Frequency Switching
* Synchronous Rectification

DMT616MLSS Distributors

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DMT616MLSS 60V N-Channel MOSFET DIODES

DIODES DMT616MLSS-like datasheet