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DMP2900UDWQ - Dual P-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Complementary Pair MOSFET.
  • Ultra-Small Surface Mount Package.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DIODES™ DMP2900UDWQ is suitable for automotive.

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Full PDF Text Transcription

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NEW PRODUCT ADVANACDEVDA INNCFEODRIMNFATOIROMNATION DMP2900UDWQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) MAX 0.75Ω @ VGS = -4.5V 1.05Ω @ VGS = -2.5V ID MAX @TA = +25°C -0.63A -0.54A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Complementary Pair MOSFET  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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