Datasheet Details
| Part number | DG640 |
|---|---|
| Manufacturer | DGME |
| File Size | 744.49 KB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet |
 DG640 Datasheet
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| Part number | DG640 |
|---|---|
| Manufacturer | DGME |
| File Size | 744.49 KB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet |
DG640 Datasheet
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DG640N，， ，，，。 ，，。 DG640 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 200 18 0.2 22 V A Ω pF Symbol Package 1 /8 ABS
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