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DG10N65 - N-CHANNEL ENHANCEMENT MODE MOSFET

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Datasheet Details

Part number DG10N65
Manufacturer DGME
File Size 0.99 MB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG10N65-DGME.pdf

DG10N65 Product details

Description

DG10N65N，， ，，，。 ，，。 DG10N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 10 0.9 20 V A Ω pF Symbol Package 1 /9

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