MTEA0N10J3 - N-Channel Enhancement Mode Power MOSFET

Product Overview

Cystech Electonics

Part number	MTEA0N10J3
Manufacturer	Cystech Electonics
File Size	264.25 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTEA0N10J3 Datasheet
Additional preview pages of the MTEA0N10J3 datasheet.

Low Gate Charge.
Simple Drive Requirement.
Pb-free lead plating package RDSON(TYP) VGS=10V, ID=12A VGS=6V, ID=10A 100V 16A 83mΩ 100mΩ Equivalent Circuit MTEA0N10J3 Outline TO-252AB TO-252AA G：Gate D：Drain S：Source GDS G DS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C (Note 1) Continuous Drain Current @ VGS=10V, TC=100°C (Note 1) Continuous Drain.

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Published: Aug 30, 2016 |