MTE50N10QE3 - N-Channel Enhancement Mode Power MOSFET

Product Overview

Cystech Electonics

Part number	MTE50N10QE3
Manufacturer	Cystech Electonics
File Size	346.61 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE50N10QE3 Datasheet
Additional preview pages of the MTE50N10QE3 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) Symbol MTE50N10QE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE50N10QE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for Ro.

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Published: Aug 30, 2016 |