MTE080A10Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE080A10Q8
Manufacturer	Cystech Electonics
File Size	402.32 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE080A10Q8-CystechElectonics.pdf

Simple drive requirement.
Low on-resistance.
Fast switching speed.
Dual N-ch MOSFET package.
Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2.5A RDSON@VGS=6V, ID=2.0A 100V 2.8A 5.0A 74mΩ(typ) 82mΩ(typ) Equivalent Circuit MTE080A10Q8 Outline SOP-8 D2 D2 D1 D1 G：Gate D：Drain S：Source Pin 1 G2 S2 G1 S1 Ordering Information Device MTE080A10Q8-0-T3-G Package Shipping SOP-8 (Pb-free.

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Published: Feb 28, 2017 |