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MTE05N08E3 - N-Channel Enhancement Mode Power MOSFET

MTE05N08E3 Description

CYStech Electronics Corp.Spec.No.: C918E3 Issued Date : 2013.06.10 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTE05N08.

MTE05N08E3 Features

* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package Symbol MTE05N08E3 Outline TO-220 G：Gate D：Drain S：Source Ordering Information Device MTE05N08E3-0-UB-S Package TO-220 (Pb-f

MTE05N08E3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE05N08E3 CYStek Product S

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Datasheet Details

Part number
MTE05N08E3
Manufacturer
Cystech Electonics
File Size
230.77 KB
Datasheet
MTE05N08E3-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
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