MTE013N10RJ3 - N-Channel Enhancement Mode Power MOSFET

Product Overview

Cystech Electonics

Part number	MTE013N10RJ3
Manufacturer	Cystech Electonics
File Size	376.80 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE013N10RJ3 Datasheet
Additional preview pages of the MTE013N10RJ3 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 42A 9A 12.3mΩ(typ) Symbol MTE013N10RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source GD S Ordering Information Device Package Shipping MTE013N10RJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape &.

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Published: Nov 4, 2024 |