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MTE013N10RJ3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 42A 9A 12.3mΩ(typ) Symbol MTE013N10RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source GD S Ordering Information Device Package Shipping MTE013N10RJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape &.

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Datasheet Details

Part number MTE013N10RJ3
Manufacturer Cystech Electonics
File Size 376.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE013N10RJ3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE013N10RJ3 Spec. No. : C056J3 Issued Date : 2017.04.10 Revised Date : 2020.10.21 Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 42A 9A 12.
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