Datasheet4U Logo Datasheet4U.com

MTB080P06N6 Datasheet - Cystech Electonics

MTB080P06N6-CystechElectonics.pdf

Preview of MTB080P06N6 PDF
MTB080P06N6 Datasheet Preview Page 2 MTB080P06N6 Datasheet Preview Page 3

Datasheet Details

Part number:

MTB080P06N6

Manufacturer:

Cystech Electonics

File Size:

464.75 KB

Description:

P-channel enhancement mode power mosfet.

MTB080P06N6, P-Channel Enhancement Mode Power MOSFET

MTB080P06N6 Features

* Simple drive requirement

* Low on-resistance

* Small package outline

* Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC

📁 Related Datasheet

MTB080N15J3 MTB08N04J3 MTB001 MTB001D01-1 MTB010A03H8 MTB010A06RH8

📌 All Tags

MTB080P06N6 P-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB080P06N6-like datasheet
MTB080P06N3
MTB080P06J3
MTB080P06L3
MTB080P06M3
MTB080P06Q8