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MTA340N02N3 - 20V N-Channel Enhancement Mode MOSFET

Features

  • Simple drive requirement.
  • Small package outline.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=4.5V, ID=650mA RDSON@VGS=2.5V,ID=500mA RDSON@VGS=1.8V,ID=200mA 20V 820mA 299mΩ(typ) 541mΩ(typ) 1.05Ω (typ) Symbol MTA340N02N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=4.5V Continuous Drain Current @ TA=70°C, VGS=4.5V P.

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Datasheet Details

Part number MTA340N02N3
Manufacturer Cystech Electonics
File Size 518.02 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTA340N02N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. 20V N-Channel Enhancement Mode MOSFET Spec. No. : C915N3 Issued Date : 2013.10.08 Revised Date : Page No. : 1/8 MTA340N02N3 Features • Simple drive requirement • Small package outline • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=4.5V, ID=650mA RDSON@VGS=2.5V,ID=500mA RDSON@VGS=1.8V,ID=200mA 20V 820mA 299mΩ(typ) 541mΩ(typ) 1.05Ω (typ) Symbol MTA340N02N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=4.5V Continuous Drain Current @ TA=70°C, VGS=4.5V Pulsed Drain Current (Notes 1, 2) Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Note : 1.
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