Datasheet4U Logo Datasheet4U.com

HBP1804M65 - Octuple High Voltage PNP Epitaxial Planar Transistor

Description

High breakdown voltage.

Low saturation voltage, typical VCE(sat) =-0.17V at Ic/IB =-20mA/-1mA.

Complementary to HBN1803M65 Pb-free lead plating and halogen-free package Equivalent Circuit HBP1804M65 Outline MISWB6×5-18L-A Top View Bottom Vie

📥 Download Datasheet

Datasheet Details

Part number HBP1804M65
Manufacturer Cystech Electonics
File Size 343.51 KB
Description Octuple High Voltage PNP Epitaxial Planar Transistor
Datasheet download datasheet HBP1804M65 Datasheet

📁 Similar Datasheet

  • HBP1037C6 - General Purpose PNP Epitaxial Planar Transistors (CYStech Electronics)
  • HBP1037S5 - General Purpose PNP Epitaxial Planar Transistors (CYStech Electronics)
  • HBP1037S6R - General Purpose PNP Epitaxial Planar Transistors (CYStech Electronics)
Other Datasheets by Cystech Electonics

    Full PDF Text Transcription

    Click to expand full text
    CYStech Electronics Corp. Octuple High Voltage PNP Epitaxial Planar Transistor HBP1804M65 Spec. No. : C619M65 Issued Date : 2015.10.28 Revised Date : Page No. : 1/7 Description • High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) =-0.17V at Ic/IB =-20mA/-1mA. • Complementary to HBN1803M65 • Pb-free lead plating and halogen-free package Equivalent Circuit HBP1804M65 Outline MISWB6×5-18L-A Top View Bottom View HBP1804M65 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C619M65 Issued Date : 2015.10.28 Revised Date : Page No. : 2/7 The following ratings and characteristics apply to each transistor in this device.
    Published: |