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BTD2118LJ3 NPN Epitaxial Planar Transistor

BTD2118LJ3 Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Spec.No.: C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 .

BTD2118LJ3 Features

* Low VCE(sat), VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A
* Excellent DC current gain characteristics
* Complementary to BTB1412LJ3
* Pb-free package Symbol BTD2118LJ3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Param

BTD2118LJ3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2118LJ3 CYStek Product Specification

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Datasheet Details

Part number
BTD2118LJ3
Manufacturer
Cystech Electonics
File Size
175.98 KB
Datasheet
BTD2118LJ3_CystechElectonics.pdf
Description
NPN Epitaxial Planar Transistor

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NPN Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTD2118LJ3-like datasheet