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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2118LJ3
Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 1/5
Features
• Low VCE(sat), VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1412LJ3 • Pb-free package
Symbol
BTD2118LJ3
Outline
TO-252
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
Power Dissipation
Junction Temperature Storage Temperature
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
BTD2118LJ3 Datasheet
