B35N04J3 - MTB35N04J3

Product Overview

Cystech Electonics

Part number	B35N04J3
Manufacturer	Cystech Electonics
File Size	213.20 KB
Description	MTB35N04J3
Datasheet	B35N04J3 Datasheet
Additional preview pages of the B35N04J3 datasheet.

Low Gate Charge.
Simple Drive Requirement.
RoHS compliant & Halogen-free package RDSON(MAX) 35mΩ Equivalent Circuit MTB35N04J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Ene.

📁 Similar Datasheet

Other Datasheets by Cystech Electonics

Published: Jul 12, 2015 |