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CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date : Page No. : 1/4
BTB1236AM3
Description
• High BVCEO • High current capability
Symbol
BTB1236AM3
Outline
SOT-89
B:Base C:Collector E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP PD Limits -180 -160 -5 -1.5 -3 0.6 1 2 Unit V V V A A W W W °C/W °C/W °C/W °C °C
(Note 1) (Note 2) (Note 3)
Thermal Resistance, Junction to Ambient
RθJA
208 125 (Note 2) 62.5 (Note 3)
Junction Temperature Storage Temperature
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.