Datasheet4U Logo Datasheet4U.com

S26KL128S - high-speed CMOS MirrorBit NOR flash devices

Download the S26KL128S datasheet PDF. This datasheet also covers the S26KL512S variant, as both devices belong to the same high-speed cmos mirrorbit nor flash devices family and are provided as variant models within a single manufacturer datasheet.

General Description

2.

3.

4.

Key Features

  • 3.0V I/O, 11 bus signals.
  • Single ended clock.
  • 1.8V I/O, 12 bus signals.
  • Differential clock (CK, CK#).
  • Chip Select (CS#).
  • 8-bit data bus (DQ[7:0]).
  • Read-Write Data Strobe (RWDS).
  • HyperFlash™ memories use RWDS only as a Read Data Strobe.
  • Up to 333 MBps sustained read throughput.
  • DDR.
  • two data transfers per clock.
  • 166-MHz clock rate (333 MBps) at 1.8V VCC.
  • 100-MHz clock rate (200 MBps) at 3.0V VCC.
  • 96-ns initial random read.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S26KL512S-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S26KL512S/S26KS512S S26KL256S/S26KS256S S26KL128S/S26KS128S 512 Mb (64 MB)/256 Mb (32 MB)/ 128 Mb (16 MB), 1.8V/3.0V HyperFlash™ Family Features ■ 3.0V I/O, 11 bus signals ❐ Single ended clock ■ 1.8V I/O, 12 bus signals ❐ Differential clock (CK, CK#) ■ Chip Select (CS#) ■ 8-bit data bus (DQ[7:0]) ■ Read-Write Data Strobe (RWDS) ❐ HyperFlash™ memories use RWDS only as a Read Data Strobe ■ Up to 333 MBps sustained read throughput ■ DDR – two data transfers per clock ■ 166-MHz clock rate (333 MBps) at 1.8V VCC ■ 100-MHz clock rate (200 MBps) at 3.