GVT71256E18 Datasheet (Cypress Semiconductor) - (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM

GVT71256E18, (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high-valued resistors.

Selection Guide 7C1325A-117 71256E18-7 Maximum Access Time (ns) Ma

GVT71256E18 Features

* Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns