FM28V102A Datasheet (Cypress Semiconductor) - 1-Mbit (64 K x 16) F-RAM Memory

FM28V102A, 1-Mbit (64 K x 16) F-RAM Memory

Address inputs: The 16 address lines select one of 64K words in the F-RAM array.

The lowest two address lines A1 *A0 may be used for page mode read and write operations.

Write Enable: A write cycle begins when WE is asserted.

The rising edge causes the FM28V102A to write the data on the DQ bu

FM28V102A Features

* Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature:

* 40 C to +85 C 44-pin thin small outline package (TSOP) Type II Restriction of hazardous substances (RoHS) compliant 1-Mbit ferroelectric random access memory (F-RAM) logically organized as