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FM28V102A Datasheet - Cypress Semiconductor

FM28V102A 1-Mbit (64 K x 16) F-RAM Memory

Address inputs: The 16 address lines select one of 64K words in the F-RAM array. The lowest two address lines A1 *A0 may be used for page mode read and write operations. Write Enable: A write cycle begins when WE is asserted. The rising edge causes the FM28V102A to write the data on the DQ bu.

FM28V102A Features

* Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature:

* 40 C to +85 C 44-pin thin small outline package (TSOP) Type II Restriction of hazardous substances (RoHS) compliant 1-Mbit ferroelectric random access memory (F-RAM) logically organized as

FM28V102A Datasheet (337.72 KB)

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Datasheet Details

Part number:

FM28V102A

Manufacturer:

Cypress Semiconductor

File Size:

337.72 KB

Description:

1-mbit (64 k x 16) f-ram memory.

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FM28V102A 1-Mbit F-RAM Memory Cypress Semiconductor

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