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CY7C25702KV18, CY7C25682KV18 - 72-Mbit DDR II+ SRAM Two-Word Burst Architecture

Cypress Semiconductor

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CY7C25702KV18 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C25702KV18, CY7C25682KV18. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	CY7C25702KV18, CY7C25682KV18
Manufacturer	Cypress Semiconductor
File Size	604.30 KB
Description	72-Mbit DDR II+ SRAM Two-Word Burst Architecture
Datasheet	CY7C25682KV18-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C25702KV18, CY7C25682KV18. Please refer to the document for exact specifications by model.

CY7C25702KV18 Product details

Features

72-Mbit density (4M × 18, 2M × 36).
550 MHz clock for high bandwidth.
Two-word burst for reducing address bus frequency.
Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz.
Available in 2.5 clock cycle latency.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Echo Clocks (CQ and CQ) simplify data capture in high speed systems.
Data valid pin (QVLD) to indicate valid data on the output.
On-d.

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Published: Mar 14, 2017 |