CY62157H Datasheet (Cypress Semiconductor) - 8-Mbit (512K words x 16 bit) Static RAM

CY62157H, 8-Mbit (512K words x 16 bit) Static RAM

CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code.

ECC logic can detect and correct single bit error in accessed location.

This device is offered in dual chip enable option.

Dual chip enable devices are accessed by asserting both chip enable inputs

CY62157H Features

* Ultra-low standby current

* Typical standby current: 5.5A

* Maximum standby current: 16 A

* High speed: 45 ns

* Voltage range: 2.2 V to 3.6 V

* Embedded Error-Correcting Code (ECC) for single-bit error correction

* 1.0 V data retention

* Transistor-transistor log