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CY62157H - 8-Mbit (512K words x 16 bit) Static RAM

Cypress Semiconductor

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Datasheet Details

Part number	CY62157H
Manufacturer	Cypress Semiconductor
File Size	373.12 KB
Description	8-Mbit (512K words x 16 bit) Static RAM
Datasheet	CY62157H-CypressSemiconductor.pdf

CY62157H Product details

Description

CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code. CE1 as LOW and CE2 as HIGH.

Features

Ultra-low standby current.
Typical standby current: 5.5A.
Maximum standby current: 16 A.
High speed: 45 ns.
Voltage range: 2.2 V to 3.6 V.
Embedded Error-Correcting Code (ECC) for single-bit error correction.
1.0 V data retention.
Transistor-transistor logic (TTL) compatible inputs and outputs.
Available in Pb-free 48-ball VFBGA and 48-pin TSOP I packages Functional.

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Published: Mar 14, 2017 |