Datasheet4U Logo Datasheet4U.com

CY14E116S - 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

Download the CY14E116S datasheet PDF. This datasheet also covers the CY14B116L variant, as both devices belong to the same 16-mbit (2048 k x 8/1024 k x 16/512 k x 32) nvsram family and are provided as variant models within a single manufacturer datasheet.

Description

The C ypress CY14X1 16L/CY14X116N/CY14X116S i s a fast SRAM, with a no nvolatile el ement in each memory cel l.

T he memory is organized as 2048 K bytes of 8 bits each or 1024 K words of 16 bits each o r 512 K words of 32 bit s each .

Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM).
  • 25-ns, 30-ns and 45-ns access times.
  • Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S).
  • Hands-off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • High reliability.
  • Infinite read, write, and RE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY14B116L-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY14ACS Quartz Crystal Low Profile HC49S Leaded Crystal Crystek Corporation
CY14ACSMD Quartz Crystal Surface Mount HC49S SMD Crystal Crystek Corporation
CY14APS Quartz Crystal Low Profile HC49S Leaded Crystal Crystek Corporation
CY14APSMD Quartz Crystal Surface Mount HC49S SMD Crystal Crystek Corporation
CY14AS Quartz Crystal Low Profile HC49S Leaded Crystal Crystek Corporation

Other Datasheets by Cypress (Infineon)

Part Number Description
CY14E116L 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14E116N 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14E101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14E101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14E101PA 1-Mbit (128K x 8) Serial (SPI) nvSRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048 K × 8/1024 K × 16/512 K × 32) nvSRAM Features 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S) ❐ Hands-off automatic STORE on power-down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down ❐ RECALL to SRAM initiated by software or power-up ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years ■ Sleep mode operation ■ Low power consumption ❐ Active current of 75 mA at 45 ns ❐ Standby mode current of 650 A
Published: |