CY14B104NA, CY14B104LA - 4-Mbit (512K x 8/256K x 16) nvSRAM

Cypress Semiconductor

The CY14B104NA by Cypress Semiconductor is a 4-Mbit (512K x 8/256K x 16) nvSRAM. Below is the official datasheet preview.

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CY14B104NA 4-Mbit (512K x 8/256K x 16) nvSRAM by Cypress Semiconductor - Datasheet Preview — Official preview page of the **CY14B104NA** 4-Mbit (512K x 8/256K x 16) nvSRAM datasheet (Cypress Semiconductor).

Datasheet Details

Part number	CY14B104NA, CY14B104LA
Manufacturer	Cypress Semiconductor
File Size	619.78 KB
Description	4-Mbit (512K x 8/256K x 16) nvSRAM
Datasheet	CY14B104LA-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY14B104NA, CY14B104LA. Please refer to the document for exact specifications by model.
Additional preview pages of the CY14B104NA datasheet.

CY14B104NA Product details

Description

STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down RECALL to SRAM initiated by software or power-up Infinite read, write, and recall cycles 1 million STORE cycles to QuantumTrap 20 year data retention Single 3 V +20, 10 operation Industrial temperature The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell.The memory is organized as

Features

20 ns, 25 ns, and 45 ns access times.
Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA).
Packages.
44-/54-pin thin small outline package (TSOP) Type II.
48-ball fine-pitch ball grid array (FBGA).
Pb-free and restriction of hazardous substances (RoHS) compliant.
Hands off automatic STORE on power-down with only a small capacitor Functional.

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Other Datasheets by Cypress Semiconductor

CY14B104N - 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104K - 4-Mbit (512 K x 8/256 K x 16) nvSRAM
CY14B104L - 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA - 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104M - 4-Mbit (512 K x 8/256 K x 16) nvSRAM
CY14B101I - 1-Mbit (128 K x 8) Serial (I2C) nvSRAM

Published: Jun 17, 2018 |