CAS325M12HM2 - All-Silicon Carbide High-Performance Half-Bridge Module

Datasheet Details

Part number	CAS325M12HM2
Manufacturer	Cree
File Size	699.29 KB
Description	All-Silicon Carbide High-Performance Half-Bridge Module
Datasheet	CAS325M12HM2-Cree.pdf

Ultra-Low Loss, Low (5 nH) Inductance.
Ultra-Fast Switching Operation.
Zero Reverse Recovery Current from Diode.
Zero Turn-Off Tail Current from MOSFET.
Normally-Off, Fail-Safe Device Operation.
AlSiC Baseplate and Si3N4 AMB Substrate Ease of Paralleling.
High-Temperature Packaging, TJ(max) = 175 °C AS9100 / ISO9001 Certified Manufacturing System Benefits.
Enables Compact and Lightwei.

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Published: Mar 23, 2018 |