Datasheet Details
| Part number | CSB1370 |
|---|---|
| Manufacturer | Continental Device |
| File Size | 89.40 KB |
| Description | PNP Silicon Epitaxial Power Transistor |
| Datasheet |
 CSB1370_ContinentalDevice.pdf
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The CSB1370 is PNP Silicon Epitaxial Power Transistor designed by Continental Device.
| Part number | CSB1370 |
|---|---|
| Manufacturer | Continental Device |
| File Size | 89.40 KB |
| Description | PNP Silicon Epitaxial Power Transistor |
| Datasheet |
CSB1370_ContinentalDevice.pdf
|
|
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|
SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=50uA, IE=0 Collector Base Voltage VEBO IE=50uA,IC=0 Emitter Base Voltage ICBO VCB=60V, IE=0 Collector Cut off
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