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CFB1370 - PNP Silicon Epitaxial Power Transistor

The CFB1370 by Continental Device is a PNP Silicon Epitaxial Power Transistor. Below is the official datasheet preview.

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Official preview page of the CFB1370 PNP Silicon Epitaxial Power Transistor datasheet (Continental Device).

Datasheet Details

Part number CFB1370
Manufacturer Continental Device
File Size 40.79 KB
Description PNP Silicon Epitaxial Power Transistor
Datasheet download datasheet CFB1370_ContinentalDevice.pdf
Additional preview pages of the CFB1370 datasheet.

CFB1370 Product details

Description

SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter- Base Voltage IC 3.0 Collector Current ICP 6.0 Peak PC 2.0 Power Dissipation @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 60 Collector Emitter Voltage VCBO IC=50uA, IE=0 60 Collector Base Voltage VEBO IE=50uA,I

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