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CMBD99 - SILICON EPITAXIAL GENERAL SWITCHING DIODE

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Datasheet Details

Part number CMBD99
Manufacturer Continental Device India Limited
File Size 213.17 KB
Description SILICON EPITAXIAL GENERAL SWITCHING DIODE
Datasheet download datasheet CMBD99_ContinentalDeviceIndiaLimited.pdf

CMBD99 Product details

Description

Repetitive Peak Reverse Voltage Continuous Reverse Voltage Non- Repetitive Peak Forward Current t=1us Peak Forward Current Average Forward Current Power Dissipation Ta=25 deg C Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (per diode) DESCRIPTION Reverse Voltage Leakage Current Forward Voltage SYMBOL VALUE VRM 35 VR 30 IFSM 4.0 IFM 300 IO 100 PT 150 Tj 125 Tstg -55 to +125 (Ta=25 deg C Unless otherwise noted) SYMBOL TEST CONDITION MIN TYP IR VF VR=30V IF=10mA IF=50mA IF=10

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