COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • • • • Series and shunt regulators High Fidelity Amplifiers Power-switching circuits Solenoid drivers
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCER VEBO VCBO VCEX IC IB PT TJ TS Collector-Emitter Voltage Collector-Emitter Voltage RBE=100Ω
Ratings
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Value
BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N -60 -70 -65 -7 -100 -70 -90 -70 -15 -7 117 -65 to +200
Unit
V V V V V A A W °C
Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25° VBE=+1.