CDBD2SC21200-G - Silicon Carbide Power Schottky Diode
Comchip
Features
- Rated to 1200V at 2 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF
Circuit diagram
C(3)
C(1) A(2)
TO-263/D2PAK
0.402(10.20) 0.394(10.00)
3
0.051(1.30) 0.043(1.10)
0.596(15.15) 0.585(14.85)
0.346(8.80) 0.339(8.60)
12
0.205(5.20) 0.197(5.00)
0.049(1.25) 0.045(1.15)
0.037(0.95) 0.033(0.85)
0.063(1.60) 0.055(1.40)
0.185(4.70) 0.177(4.
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Silicon Carbide Power Schottky Diode
CDBD2SC21200-G
Reverse Voltage: 1200V Forward Current: 2A RoHS Device
Features
- Rated to 1200V at 2 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF
Circuit diagram
C(3)
C(1) A(2)
TO-263/D2PAK
0.402(10.20) 0.394(10.00)
3
0.051(1.30) 0.043(1.10)
0.596(15.15) 0.585(14.85)
0.346(8.80) 0.339(8.60)
12
0.205(5.20) 0.197(5.00)
0.049(1.25) 0.045(1.15)
0.037(0.95) 0.033(0.85)
0.063(1.60) 0.055(1.40)
0.185(4.70) 0.177(4.50)
0.054(1.37) 0.046(1.17)
0.107(2.72) 0.091(2.32) 0.019(0.47) 0.014(0.
CDBD2SC21200-G Datasheet
