Datasheet Details
Part number:
PN4HN60-DBI-T1, PN4HN60
Manufacturer:
Chipown
File Size:
356.73 KB
Description:
N-channel superjunction mosfet.
Note:
This datasheet PDF includes multiple part numbers: PN4HN60-DBI-T1, PN4HN60.
Please refer to the document for exact specifications by model.
PN4HN60-DBI-T1, PN4HN60, N-Channel Superjunction MOSFET
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.
The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET.
By combining the experience of the
PN4HN60-DBI-T1 Features
* RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.8A
* Extremely high dv/dt capablity
* Very high commutation ruggedness
* Extremely low losses due to very low Rdson
* Qg
* Ultra low gate charge ( Typ. Qg = 15nC)
* Low effective output capacitance
* 100% avalanche tested
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