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PN10HN60-CBI-T1, PN10HN60 - N-Channel Superjunction MOSFET

Chipown

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PN10HN60-CBI-T1 Datasheet Preview — This datasheet PDF includes multiple part numbers: PN10HN60-CBI-T1, PN10HN60. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	PN10HN60-CBI-T1, PN10HN60
Manufacturer	Chipown
File Size	374.50 KB
Description	N-Channel Superjunction MOSFET
Datasheet	PN10HN60-Chipown.pdf
Note	This datasheet PDF includes multiple part numbers: PN10HN60-CBI-T1, PN10HN60. Please refer to the document for exact specifications by model.

PN10HN60-CBI-T1 Product details

Description

The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.

Features

RDS(on) = 0.34Ω ( Typ. )@ VGS = 10V, ID = 5A.
Extremely high dv/dt capablity.
Very high commutation ruggedness.
Extremely low losses due to very low Rdson.
Qg.
Ultra low gate charge ( Typ. Qg = 25nC).
Low effective output capacitance.
100% avalanche tested.
JEDEC qualified, Pb-free plating.

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Other Datasheets by Chipown

PN10HN60-CAI-T1 - N-Channel Superjunction MOSFET
PN10HN60 - N-Channel Superjunction MOSFET

Published: Oct 11, 2016 |