MX2810 N-Channel Enhancement Mode Power MOSFET

ChipSourceTek

Description

N-Channel Enhancement Mode Power MOSFET .
The MX2810 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: MX2810
Manufacturer: ChipSourceTek
File Size: 597.28 KB
Datasheet: MX2810-ChipSourceTek.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ. )=14mΩ Schematic diagram @VGS=3.8V RDS(ON)(Typ. )=15mΩ @VGS=2.5V RDS(ON)(Typ. )=18mΩ ESD Rating:2000V HBM
* High power and current handing capability
* Lead free product is acquired

MX2810 Distributors

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MX2810 N-Channel Enhancement Mode Power MOSFET ChipSourceTek

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