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MX2810 N-Channel Enhancement Mode Power MOSFET

MX2810 Description

N-Channel Enhancement Mode Power MOSFET .
The MX2810 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

MX2810 Features

* VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ. )=14mΩ Schematic diagram @VGS=3.8V RDS(ON)(Typ. )=15mΩ @VGS=2.5V RDS(ON)(Typ. )=18mΩ ESD Rating:2000V HBM
* High power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
MX2810
Manufacturer
ChipSourceTek
File Size
597.28 KB
Datasheet
MX2810-ChipSourceTek.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET ChipSourceTek
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