CEM9939 Datasheet - Chino-Excel Technology

CEM9939 Dual Enhancement Mode Field Effect Transistor(N and P Channel)

CEM9939 N-Channel BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 ID=250 A 5 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variationwith Temperature VGS, Gate to Source Voltage (V) 13.0 20.0 9.0 7.0 5.0 VDS=15V 2.

CEM9939 Datasheet (754.85 KB)

CEM9939 Datasheet Preview — Preview of CEM9939 PDF

Datasheet Details

Part number:

CEM9939

Manufacturer:

Chino-Excel Technology

File Size:

754.85 KB

Description:

Dual enhancement mode field effect transistor(n and p channel).

📁 Related Datasheet

CEM9935 Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM9935 Dual N-Channel 20V MOSFET (VBsemi)

CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM9936 Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM9936A Dual N-Channel MOSFET (Chino-Excel Technology)

CEM9939A Dual-Channel MOSFET (CET)

CEM9925 Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM9926 Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

TAGS

CEM9939 Dual Enhancement Mode Field Effect TransistorN and Channel Chino-Excel Technology

CEM9939 Distributor