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MPQ3906 - PNP SILICON QUAD TRANSISTOR

Description

The CENTRAL SEMICONDUCTOR MPQ3906 type is comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for general purpose amplifier and switching applications.

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MPQ3906 PNP SILICON QUAD TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3906 type is comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 40 40 5.0 200 500 2.0 -65 to +150 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=30V IEBO VEB=4.0V BVCBO IC=10μA 40 BVCEO IC=1.
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