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CWDM3011P P-Channel MOSFET

CWDM3011P Description

CWDM3011P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CWDM3011P is a high current silicon P-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver a.

CWDM3011P Features

* Low rDS(ON)
* High current
* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance

CWDM3011P Applications

* This MOSFET has high current capability with beneficially low rDS(ON), and low gate charge. SOIC-8 CASE MARKING CODE: C3011P APPLICATIONS:
* Load/Power switches
* DC-DC converter circuits

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P-Channel MOSFET Central Semiconductor
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