CP591V Datasheet (Central Semiconductor)

CP591V, PNP Transistor

PROCESS Small Signal Transistor CP591V PNP - Amp/Switch Transistor Chip www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 30,475 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE COLLECTOR R1 EPITAXIAL PLANAR 19 x 19 MILS 7.1 MILS 3.5 x 4.3 MILS 3.5 x 4.5 MILS Al - 30,000Å Au - 18,000Å R3 (22-March 2010