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CMRDM3575 - SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS

CMRDM3575 Description

CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed.

CMRDM3575 Features

* Power dissipation: 125mW
* Low package profile: 0.5mm (MAX)
* Low rDS(ON)
* Low threshold voltage
* Logic level compatible
* Small SOT-963 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu

CMRDM3575 Applications

* These MOSFETs offer low rDS(ON) and low threshold voltage. MARKING CODE: CT SOT-963 CASE
* Device is Halogen Free by design APPLICATIONS:
* Load/Power switches
* Power supply converter circuits

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SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS Central Semiconductor
Central Semiconductor CMRDM3575-like datasheet