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CMKT5089M10 - DUAL NPN SILICON TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individually isolated 5089 NPN silicon transistors with matched hFE.

This ULTRAmini™ device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package.

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CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT-363 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAmini™ device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been designed for applications requiring high gain and low noise. MARKING CODE: C9M0 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 30 25 4.
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