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2SC1815-GR - SILICON NPN TRANSISTORS

Download the 2SC1815-GR datasheet PDF. This datasheet also covers the 2SC1815 variant, as both devices belong to the same silicon npn transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

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Note: The manufacturer provides a single datasheet file (2SC1815-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SC1815-GR NPN Transistor MCC
2SC1815-BL NPN Transistor MCC
2SC1815-O NPN Transistor MCC
2SC1815-Y NPN Transistor MCC
2SC1815 Silicon NPN Transistor Toshiba Semiconductor

Other Datasheets by Central Semiconductor

Part Number Description
2SC1815-BL SILICON NPN TRANSISTORS
2SC1815-O SILICON NPN TRANSISTORS
2SC1815-Y SILICON NPN TRANSISTORS
2SC1815 SILICON NPN TRANSISTORS

Full PDF Text Transcription

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2SC1815 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JA 60 50 5.0 150 400 -55 to +125 250 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V ICEO VCE=50V IEBO VEB=5.
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