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2N6301 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Download the 2N6301 datasheet PDF. This datasheet also covers the 2N6298 variant, as both devices belong to the same complementary silicon power darlington transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications.

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Note: The manufacturer provides a single datasheet file (2N6298-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Central Semiconductor

Part Number Description
2N6300 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
2N6312 SILICON TRANSISTORS
2N6313 SILICON TRANSISTORS
2N6314 SILICON TRANSISTORS
2N6315 COMPLEMENTARY SILICON POWER TRANSISTORS

Full PDF Text Transcription

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2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.0 8.0 16 120 75 -65 to +200 2.
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