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2N6284 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Download the 2N6284 datasheet PDF (2N6282 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for complementary silicon power darlington transistors.

Description

The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial base process, designed for general purpose high current, high gain amplifier and switching applications.

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Note: The manufacturer provides a single datasheet file (2N6282-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Central Semiconductor
  • 2N6282 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • 2N6283 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • 2N6285 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • 2N6286 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • 2N6287 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • 2N6288 - COMPLEMENTARY SILICON POWER TRANSISTORS
  • 2N6211 - SILICON PNP POWER TRANSISTORS
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Full PDF Text Transcription

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2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial base process, designed for general purpose high current, high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6282 2N6285 60 60 2N6283 2N6286 80 80 5.0 20 40 0.
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