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1N5546B - SILICON ZENER DIODES

Download the 1N5546B datasheet PDF. This datasheet also covers the 1N5518B variant, as both devices belong to the same silicon zener diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications.

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Note: The manufacturer provides a single datasheet file (1N5518B-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
1N5546B LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Deuices Incorporated
1N5546B 500mW Zener Diodes Microsemi
1N5546B-1 LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Deuices Incorporated
1N5546B-1 Low Noise Zener Diode MA-COM
1N5546B-1 500mW Zener Diodes Microsemi

Other Datasheets by Central Semiconductor

Part Number Description
1N5540B SILICON ZENER DIODES
1N5541B SILICON ZENER DIODES
1N5542B SILICON ZENER DIODES
1N5543B SILICON ZENER DIODES
1N5544B SILICON ZENER DIODES

Full PDF Text Transcription

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1N5518B THRU 1N5546B SILICON ZENER DIODES 400mW, 3.3 THRU 33 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX V V V Test Current IZT mA Maximum Zener Impedance (Note 1) ZZT @ IZT Ω Maximum Reverse Current IR @ VR μA V 1N5518B 3.135 3.3 3.465 20 26 5.0 1.0 1N5519B 3.420 3.6 3.780 20 24 3.0 1.0 1N5520B 3.705 3.9 4.
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