Datasheet4U Logo Datasheet4U.com

1N5536B Datasheet - Central Semiconductor

1N5536B SILICON ZENER DIODES

The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNI.

1N5536B Datasheet (130.14 KB)

Preview of 1N5536B PDF
1N5536B Datasheet Preview Page 2 1N5536B Datasheet Preview Page 3

Datasheet Details

📁 Related Datasheet

1N5536 LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE/ LOW LEAKAGE (Knox Semiconductor Inc)

1N5536 0.4W Low Voltage Avalanche Diodes (JGD)

1N5536 Low Noise Zener Diode (MA-COM)

1N5536A (1N5518A - 1N5546A) ZENER DIODES (New Jersey Semi-Conductor)

1N5536A LOW VOLTAGE AVALANCHE ZENER DIODES (Motorola)

1N5536A LOW VOLTAGE AVALANCHE ZENER DIODES (Motorola)

1N5536B LOW REVERSE LEAKAGE CHARACTERISTICS (Compensated Deuices Incorporated)

1N5536B 500mW Zener Diodes (Microsemi)

TAGS

1N5536B SILICON ZENER DIODES Central Semiconductor

1N5536B Distributor