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1N4710 - SILICON ZENER DIODE

Download the 1N4710 datasheet PDF. This datasheet also covers the 1N4678 variant, as both devices belong to the same silicon zener diode family and are provided as variant models within a single manufacturer datasheet.

Description

The CENTRAL SEMICONDUCTOR 1N4678 series devices are silicon Zener diodes designed for applications requiring an extremely low operating current (50μA), and low leakage.

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Note: The manufacturer provides a single datasheet file (1N4678-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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1N4678 THRU 1N4717 SILICON ZENER DIODE LOW LEVEL 500mW, 1.8 THRU 43 VOLT 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4678 series devices are silicon Zener diodes designed for applications requiring an extremely low operating current (50μA), and low leakage. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TL=75°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 500 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX Test Current IZT Maximum Reverse Leakage Current IR @ VR Maximum Voltage Change* ΔVZ V V V μA μA V V Maximum Regulator Current IZM mA 1N4678 1.710 1.8 1.890 50 7.5 1.0 0.
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