NE5531079A SILICON POWER MOS FET

California Eastern Labs

Description

SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS .
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.

📥 Download Datasheet

NE5531079A Datasheet Preview — Preview of NE5531079A PDF

Datasheet Specifications

Part number: NE5531079A
Manufacturer: California Eastern Labs
File Size: 382.84 KB
Datasheet: NE5531079A-CaliforniaEasternLabs.pdf
Description: SILICON POWER MOS FET

Features

* High output power
* High linear gain
* Surface mount package
* Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7  5.7  1.1 mm MAX. : VDS

Applications

* 460 MHz band radio systems
* 900 MHz band radio systems ORDERING INFORMATION Part Number NE5531079A Order Number NE5531079A-A Package 79A (Pb-Free) Marking W5 Supplying Form
* 12 mm wide embossed taping
* Gate pin face the perforation side of the tape NE5531079A-T1

NE5531079A Distributors

📁 Related Datasheet

NE5532 NE5532A NE5533 NE5533A NE5534 NE5534A

📌 All Tags

NE5531079A SILICON POWER MOS FET California Eastern Labs

California Eastern Labs NE5531079A-like datasheet