TIP31CJ3 3A NPN Epitaxial Planar Power Transistor

CYStech

Description

CYStech Electronics Corp.3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Spec.No.: C609J3 Issued Date : 2014.06.06 Revised Date : Page No.: 1/6.
TIP31CJ3 is designed for use in general purpose amplifier and switching applications. Low collector-emitter saturation voltage, VCE.

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Datasheet Specifications

Part number: TIP31CJ3
Manufacturer: CYStech
File Size: 274.13 KB
Datasheet: TIP31CJ3-CYStech.pdf
Description: 3A NPN Epitaxial Planar Power Transistor

Features

* Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A
* High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)
* High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA
* Pb-free lead plating and halogen-free package Symbol T

TIP31CJ3 Distributors

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TIP31CJ3 NPN Epitaxial Planar Power Transistor CYStech

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