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MTP162M3 - 30V P-CHANNEL Enhancement Mode MOSFET

Features

  • Single Drive Requirement.
  • Low On-resistance, RDS(ON)=80mΩ@VGS=-4.5V, ID=-3.0A.
  • Ultra High Speed Switching.
  • Pb-free package Symbol MTP162M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) VDS VGS ID ID IDM Pd -30 ±12 -5 -4 -20.

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Datasheet Details

Part number MTP162M3
Manufacturer CYStech
File Size 610.08 KB
Description 30V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP162M3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET MTP162M3 Spec. No. : C420M3 Issued Date : 2007.10.08 Revised Date : 2013.08.12 Page No. : 1/8 Features • Single Drive Requirement • Low On-resistance, RDS(ON)=80mΩ@VGS=-4.5V, ID=-3.0A • Ultra High Speed Switching • Pb-free package Symbol MTP162M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) VDS VGS ID ID IDM Pd -30 ±12 -5 -4 -20 *1, 3 2 *2 Linear Derating Factor 0.02 Thermal Resistance, Junction to Ambient Rth,ja 62.
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