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MTN10N65CE3 - N-Channel Enhancement Mode Power MOSFET

Description

The MTN10N65CE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet Details

Part number MTN10N65CE3
Manufacturer CYStech
File Size 461.79 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN10N65CE3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN10N65CE3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=6A 650V 10A 0.55Ω Description The MTN10N65CE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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